Effect of Pad Surface Micro-Texture on Removal Rate during Tungsten Chemical Mechanical Planarization
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Chemical Mechanical Polishing and a Succedent Reactive Ion Etching Processing of Sapphire Wafer
2. Two-Step Chemical Mechanical Polishing of Sapphire Substrate
3. A study of the effects of polishing parameters on material removal rate and non-uniformity
4. A material removal model for polishing glass–ceramic and aluminum magnesium storage disks
5. Steigerwald J. M. Murarka S. P. Gutmann R. J. Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, New York (1997).
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface;ECS Journal of Solid State Science and Technology;2024-04-01
2. Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing;Applied Surface Science;2023-09
3. Analysis of the material removal mechanism in chemical mechanical polishing with in-situ macroscale nonwoven pad contact interface observation using an evanescent field;Precision Engineering;2023-07
4. A Material Removal Rate Model for Tungsten Chemical Mechanical Planarization;ECS Journal of Solid State Science and Technology;2022-11-01
5. Modeling the microscale contact status in chemical mechanical polishing process;International Journal of Mechanical Sciences;2022-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3