Analysis of the material removal mechanism in chemical mechanical polishing with in-situ macroscale nonwoven pad contact interface observation using an evanescent field-Reference-Cited by-同舟云学术

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Analysis of the material removal mechanism in chemical mechanical polishing with in-situ macroscale nonwoven pad contact interface observation using an evanescent field

Published:2023-07 Issue: Volume:82 Page:281-289
ISSN:0141-6359
Container-title:Precision Engineering
language:en
Short-container-title:Precision Engineering

Author:

Uneda Michio,Kubo Naoki,Hatatani Mizuki,Hotta Kazutoshi,Morinaga Hitoshi

Publisher

Elsevier BV

Subject

General Engineering

Reference39 articles.

1. Dual damascene: a ULSI wiring technology;Kaanta;Proc Eighth Int IEEE VLSI Multilevel Interconnect Conf,1991

2. Enhanced open innovation: CMP innovation to open new paradigm;Tsujimura;ECS J Solid State Sci Technol,2019

3. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials;Aida;Curr Appl Phys,2012

4. Highly efficient chemical mechanical polishing method for SiC substrates using enhanced slurry containing bubbles of ozone gas;Uneda;Precis Eng,2020

5. Improvement of finishing efficiency considering contact behavior of polishing pad with workpiece surface;Naito;Jpn Soc. Mech Eng. (C),2011

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing;ECS Journal of Solid State Science and Technology;2023-07-01

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