Characterizations of Pulsed Chemical Vapor Deposited-Tungsten Thin Films for Ultrahigh Aspect Ratio W-Plug Process-Reference-Cited by-同舟云学术

Characterizations of Pulsed Chemical Vapor Deposited-Tungsten Thin Films for Ultrahigh Aspect Ratio W-Plug Process

Published:2005 Issue:6 Volume:152 Page:C408
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Soo-Hyun,Hwang Eui-Sung,Ha Seung-Chul,Pyi Seung-Ho,Sun Ho-Jung,Lee Joo-Wan,Kawk Nohjung,Kim Jun-Ki,Sohn Hyunchul,Kim Jinwoong

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. J.E.J. Schmitz ,Chemical Vapor Deposition of Tungsten and Tungsten Silicide, Noyes, Park Ridge, NJ (1992).

2. Selective Low Pressure Chemical Vapor Deposition of Tungsten

3. The Kinetics of LPCVD Tungsten Deposition in a Single Wafer Reactor

4. Silane reduced chemical vapor deposition tungsten as a nucleating step in blanket W

5. Comparison of mechanical and microstructural properties of hydrogen and silane reduced low pressure chemical vapor deposited tungsten films

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