First-Principles Investigation of Morphological Evolution of Tungsten Growth on Alumina Surfaces: Implications for Thin-Film Growth-Reference-Cited by-同舟云学术

First-Principles Investigation of Morphological Evolution of Tungsten Growth on Alumina Surfaces: Implications for Thin-Film Growth

Published:2022-10-21 Issue:11 Volume:5 Page:16365-16375
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Park Hwanyeol¹²^ORCID,Han Dong-Hoon³,Lim Hong Taek³,Choi Woojin⁴,Kim Ho Jun⁵

Affiliation:

1. Department of Display Materials Engineering, Soonchunhyang University, 22, Soonchunhyang-ro, Asan City, Chungnam31538, Republic of Korea

2. Department of Electronic Materials, Devices, and Equipment Engineering, Soonchunhyang University, 22, Soonchunhyang-ro, Asan City, Chungnam31538, Republic of Korea

3. Memory Metal Technology Team, Giheung Hwaseong Complex, Samsung Electronics, Suwon445-701, South Korea

4. Department of Materials Science and Engineering, Seoul National University, Seoul151-744, Korea

5. Department of Mechanical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Gyeonggi-do15588, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Korea Institute of Science and Technology Information

Soonchunhyang University

BK21 FOUR (Fostering Outstanding Universities for Research)

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c03414

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2. Capogreco, E.; Lisoni, J. G.; Arreghini, A.; Subirats, A.; Kunert, B.; Guo, W.; Maurice, T.; Tan, C.; Degraeve, R.; De Meyer, K.; Van Houdt, J.MOVPE In1–xGaxAs high mobility channel for 3-D NAND memory. In 2015 IEEE International Electron Devices Meeting (IEDM), 7–9 Dec. 2015, 2015; pp. 3.1.1–3.1.4.

3. The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

4. Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer

5. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High- κ Dielectrics and SiGe Epitaxial Substrates

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