The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices-Reference-Cited by-同舟云学术

The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

Published:2013-07-28 Issue:4 Volume:114 Page:044104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lan Xuexin,Ou Xin,Cao Yanqiang,Tang Shiyu,Gong Changjie,Xu Bo,Xia Yidong,Yin Jiang,Li Aidong,Yan Feng,Liu Zhiguo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4816463

Reference28 articles.

1. Performance improvement of flash memory using AlN as charge-trapping Layer

2. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

3. Integrated nanoelectronics for the future

4. On the go with SONOS

5. Design considerations in scaled SONOS nonvolatile memory devices

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