Effects of Pattern Density and Pitch on Interaction Distance and Shallow Trench Isolation Chemical Mechanical Polishing

Author:

Park Young Bae,Kim Joon Yong,Seo Dae Wan,Lee Won Gyu

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Rapid characterization and modeling of pattern-dependent variation in chemical-mechanical polishing

2. B. E. Stine, D. O. Ouma, R. R. Divecha, D. S. Boning, J. E. Chung, D. L. Hetherington, I. Ali, G. Shinn, J. Clark, O. S. Nakagawa, and S. Y. Oh, inProceedings of Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, 266 (1997).

3. D. Ouma, C. Oji, D. Boning, J. Chung, D. Hetherington, and P. Merkle, inProceedings of Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference,20 (1998).

4. The physical and electrical effects of metal-fill patterning practices for oxide chemical-mechanical polishing processes

5. G. Y. Liu, R. F. Zhang, K. Hsu, and L. Camilletti, inProceedings of Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference,120 (1999).

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