Pattern Density Dependency of the Underlying Layer on O3-Tetraethylorthosilicate (TEOS) Film Formation
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone
2. Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
3. High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation
4. A Conformal Oxide Liner for Through Silicon Vias by Pulsed SA-CVD Deposition
5. Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVD
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1. Alternative insulation liners for through-silicon vias: A comprehensive review;Materials Science in Semiconductor Processing;2023-11
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3. Comparative Surface Study on Silicon Dioxide Film Covered with Alcohols;ECS Journal of Solid State Science and Technology;2013-10-16
4. Gap Filling Model of O3-Tetraethylorthosilicate Film Formed on an Underlying Layer Pretreated with Organic Solvent;ECS Journal of Solid State Science and Technology;2013
5. Relationship between Surface Free Energy of Underlying Layers and O3-TEOS Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2013
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