High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation-Reference-Cited by-同舟云学术

High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation

Published:1999-03-01 Issue:3 Volume:146 Page:1181-1185
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Xia L. ‐Q.¹,Nemani S.¹,Galiano M.¹,Pichai S.¹,Chandran S.¹,Yieh E.¹,Cote D.²,Conti R.²,Restaino D.²,Többen D.³

Affiliation:

1. Applied Materials, Incorporated, Santa Clara, California 95054, United States of America

2. IBM Corporation

3. Siemens Microelectronics Incorporated, DRAM Development Alliance, Hopewell Junction, New York 12533, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391742/pdf

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