Self-Controlled Constant-Current Temperature Stress for Triangular Voltage Sweep Measurements of Cu

Abstract

We present a new methodology for the characterization of Cu diffusion barriers, which is based on Triangular Voltage Sweep (TVS) measurements of Cu+ after Constant-Current Temperature Stress (CCTS). We show that CCTS-TVS measurements are effective for identifying defective Cu diffusion barriers. Finally, we discuss about mechanisms of Cu+ drift into dielectrics.