In situstudy on low-kinterconnect time-dependent-dielectric-breakdown mechanisms-Reference-Cited by-同舟云学术

In situstudy on low-kinterconnect time-dependent-dielectric-breakdown mechanisms

Published:2014-03-28 Issue:12 Volume:115 Page:124101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Boon Yeap Kong,Gall Martin,Liao Zhongquan,Sander Christoph,Muehle Uwe,Justison Patrick,Aubel Oliver,Hauschildt Meike,Beyer Armand,Vogel Norman,Zschech Ehrenfried

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4869403

Reference24 articles.

1. Chip–Package Interaction and Reliability Improvement by Structure Optimization for Ultralow-$k$ Interconnects in Flip-Chip Packages

2. The influence of process parameters on electromigration lifetime statistics

3. J. Noguchi, N. Miura, M. Kubo, T. Tamaru, H. Yamaguchi, N. Hamada, K. Makabe, R. Tsuneda, and K. Takeda, “Cu-Ion-Migration Phenomena and its influence on TDDB Lifetime in Cu metallization,” in International Reliability Physics Symposium (2003), p. 287.

4. Interlevel Dielectric Failures in Copper/Low-k Structures

5. Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits

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