Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes-Reference-Cited by-同舟云学术

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Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes

Published:2001 Issue:11 Volume:4 Page:G88
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Choi Chel-Jong,Seong Tae-Yeon,Lee Key-Min,Lee Joo-Hyoung,Park Young-Jin,Lee Hi-Deok

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference11 articles.

1. Silicides for integrated circuits: TiSi2 CoSi2

2. A silicidation-induced process consideration for forming scale-down silicided junction

3. Abnormal junction leakage characteristics in titanium-capped cobalt disilicide

4. A. Steegen, A. Lauwers, M. de Potter, G. Badenes, R. Rooyackers, and K. Maex, in Proceedings of the Symposium on VLSI Technology Digest of Technology , p. 180 (2000).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching;Electronic Materials Letters;2010-06

2. Secondary emission of strain-induced dopant contrast in the source/drain regions of metal-oxide-semiconductor devices;Applied Physics Letters;2006-05-22

3. Chemical junction delineation of a specific site in Si devices;Journal of Electron Microscopy;2004-06-01

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