Secondary emission of strain-induced dopant contrast in the source/drain regions of metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2207216
Reference17 articles.
1. High-resolution two-dimensional dopant characterization using secondary ion mass spectrometry
2. Dopant profiling on semiconducting sample by scanning capacitance force microscopy
3. Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam
4. Two-dimensional dopant profile of 0.2 μm metal–oxide–semiconductor field effect transistors
5. Mechanism for secondary electron dopant contrast in the SEM
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface potential mapping of p+/n-well junction by secondary electron potential contrast with in situ nano-probe biasing;Microelectronic Engineering;2012-07
2. Energy filtered scanning electron microscopy: Applications to dopant contrast;Journal of Physics: Conference Series;2010-02-01
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