Two-dimensional dopant profile of 0.2 μm metal–oxide–semiconductor field effect transistors
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Secondary emission of strain-induced dopant contrast in the source/drain regions of metal-oxide-semiconductor devices;Applied Physics Letters;2006-05-22
2. Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
3. Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching;Journal of The Electrochemical Society;2005
4. Two-dimensional ultrashallow junction characterization of metal-oxide-semiconductor field effect transistors with strained silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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