Abnormal junction leakage characteristics in titanium-capped cobalt disilicide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371513
Reference9 articles.
1. Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti‐Si(100) System
2. Epitaxial CoSi2films on Si(100) by solid‐phase reaction
3. The Thermal Stability of CoSi2 on Polycrystalline Silicon: The Effect of Silicon Grain Size and Metal Thickness
4. Manufacturability Issues for Application of Silicides In 0.25 μm CMOS Process and Beyond
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1. High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions;Journal of The Electrochemical Society;2011
2. (Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions;ECS Transactions;2010-10-01
3. Dependence of Sheet Resistance of CoSi2with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process;Japanese Journal of Applied Physics;2007-11-06
4. N/sup +//P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices;IEEE Transactions on Electron Devices;2002-05
5. Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes;Electrochemical and Solid-State Letters;2001
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