(Invited) High Doping/High Electric Field Effects on the Characteristics of CMOS Compatible p-n Junctions

Abstract

This paper reviews the impact of the presence of a high doping density and/or high electric field on the current-voltage and capacitance-voltage characteristics of CMOS compatible p-n junctions. In the first instance, the basic mechanisms will be explained and illustrated by examples taken from the literature. Next, the field-induced leakage current of state-of-the-art and future technology nodes is discussed. It will be shown that in modern junctions, high-field effects, like trap-assisted tunneling (TAT) and band-to-band-tunneling (BTBT) play a prominent role.