Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching-Reference-Cited by-同舟云学术

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Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching

Published:2010-06 Issue:2 Volume:6 Page:55-58
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Kil Yeon-Ho,Jeong Myeong-Il,Shim Kyu-Hwan,Hong Hyo-Bong,Yun Hyung-Joong,Kang Seung-Min,Ahn Kwang-Soon,Choi Chel-Jong

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.3365/eml.2010.06.055.pdf

Reference13 articles.

1. C. Hill, J. Vac. Sci. Technol. B. 10, 289 (1992).

2. C. J. Choi and T. Y. Seong, J. Electrochem. Soc. 147, 1525 (2000).

3. 3. C. J. Choi, T. Y. Seong, K. M. Lee, J. H. Lee, Y. J. Park, and H. D. Lee, Electrochem. Solid-State Lett. 4, G88 (2001).

4. C. J. Choi, T. Y. Seong, K. M. Lee, J. H. Lee, Y. J. Park, and H. D. Lee, IEEE Trans. Electron Device Lett. 23, 188 (2002).

5. L. Gong, S. Peterson, L. Frey, and H. Ryssel, Nucl. Instrum. Methods B. 96, 133 (1995).

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