Improved delineation technique for two dimensional dopant profiling-Reference-Cited by-同舟云学术

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Improved delineation technique for two dimensional dopant profiling

Published:1995-03 Issue:1-2 Volume:96 Page:133-138
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gong L.,Petersen S.,Frey L.,Ryssel H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Proc. VLSI Process and Device Modelling;Ryssel,1983

2. Proc. NASECODE VI;Lorenz,1989

3. A Spreading Resistance‐Based Technique for Two‐Dimensional Carrier Profiling

4. Proc. ESS-DERC '89;Gong,1989

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching;Electronic Materials Letters;2010-06

2. Contribution of dynamic charging effects into dopant contrast mechanisms in silicon;Journal of Materials Science;2006-07

3. Transmission Electron Microscopy Study of Two-Dimensional Dopant Profiling in Metal-Oxide-Semiconductor Field Effect Transistor Test Structures and Devices;Journal of The Electrochemical Society;2000

4. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

5. Two-dimensional profiling in silicon using conventional and electrochemical selective etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01

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