A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine-Reference-Cited by-同舟云学术

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A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine

Published:2016-12-02 Issue:1 Volume:6 Page:P7-P13
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wang Chenxi,Liu Yannan,Suga Tadatomo

Funder

The National Natural Science Foundation of China

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics

2. Overview of low temperature hydrophilic Ge to Si direct bonding for heterogeneous integration

3. Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

4. A Review of Hydrophilic Silicon Wafer Bonding

5. Void-free low-temperature silicon direct-bonding technique using plasma activation

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1. Low-cost O2 plasma activation assisted direct bonding of β-Ga2O3 and Si substrates in air;Materials Science in Semiconductor Processing;2024-08

2. Low-temperature Cu/SiO2 hybrid bonding based on Ar/H2 plasma and citric acid cooperative activation for multi-functional chip integration;Applied Surface Science;2024-03

3. A simple chemical method to nondestructively regenerate functional nanochannels for single-molecule studies;Sensors and Actuators B: Chemical;2023-10

4. Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding;ECS Journal of Solid State Science and Technology;2022-06-01

5. Hybrid Plasma Activation Strategy for the Protein‐Coated Magnesium Implants in Orthopedic Applications;Advanced Materials Interfaces;2022-02-04

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