Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate-Reference-Cited by-同舟云学术

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Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

Published:2017 Issue:11 Volume:6 Page:S3040-S3043
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Duffy S. J.,Benbakhti B.,Mattalah M.,Zhang W.,Bouchilaoun M.,Boucherta M.,Kalna K.,Bourzgui N.,Maher H.,Soltani A.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Ishida M. Uemoto Y. Ueda T. Tanaka T. Ueda D. , “GaN power switching devices”. The 2010 Int. Power Electronics Conf. – ECCE ASIA – 1014–1017 (2010).

2. History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond

3. GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

5. AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al_0.07Ga_0.93N back barrier layer;Semiconductor Science and Technology;2024-07-11

2. Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching;Electronics;2024-06-25

3. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01

4. Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures;Applied Sciences;2022-11-01

5. Improved Drain Current with Suppressed Short Channel Effect of p + Pocket Double-Gate MOSFET in Sub-14 nm Technology Node;Silicon;2022-03-22

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