Crystal Damage Removal by Spike and Flash Annealing

Abstract

The formation of extended defects resulting from the precipitation of the large amounts of interstitials and vacancies generated during the dopant and pre-amorphisation implantation is the major issue related to the formation of highly doped p+/n junctions. Interactions between defects and implanted dopants produce diffusion and activation anomalies that are among the major obstacles to the realisation of ultra- shallow junctions satisfying the ITRS requirements. The ideal thermal treatment should remove all the damage and get a high dopant activation with minimal diffusion. Modifying first the depth of the end-of-range damage by varying the pre- amorphisation implantation energy and the thermal budget by using second (spike) and millisecond (fRTP) annealing, the optimal values for implantation energy and thermal budget can be extracted for a complete defect annihilation. Transmission electron microscopy is used to determine the crystal quality.