Buried melting in germanium implanted silicon by millisecond flash lamp annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2993332
Reference9 articles.
1. Crystal Damage Removal by Spike and Flash Annealing
2. Advanced Thermal Processing of Ultrashallow Implanted Junctions Using Flash Lamp Annealing
3. Dopant segregation in silicon by pulsed-laser annealing: A test case for the concept of thermal melting
4. General model and segregation coefficient measurement for ultrashallow doping by excimer laser annealing
5. The Ge−Si (Germanium-Silicon) system
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2. A review of thermal processing in the subsecond range: semiconductors and beyond;Semiconductor Science and Technology;2016-09-01
3. III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics;Journal of Applied Physics;2014-02-21
4. Fabrication of Si1-xGexAlloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing;Acta Physica Polonica A;2013-05
5. (Invited) Advances in Si and Ge Millisecond Processing: From SOI to Superconductivity and Carrier-Mediated Ferromagnetism;ECS Transactions;2011-04-25
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