Modeling of junction formation in scaled Si devices-Reference-Cited by-同舟云学术

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Modeling of junction formation in scaled Si devices

Published:2014-02-05 Issue:1 Volume:13 Page:33-39
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Noda Taiji,Vrancken Christa,Vandervorst Wilfried

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-013-0548-6.pdf

Reference46 articles.

1. Severi, S., et al.: In: Tech. Dig. Int. Electron Device Meet., p. 859 (2006)

2. Hoffmann, T.Y., et al.: In: IWJT2007 (2007). S8-3

3. Ortolland, C., et al.: In: VLSI2008, p. 186 (2008)

4. Noda, T., et al.: In: Tech. Dig. Int. Electron Device Meet., p. 377 (2006)

5. Lopez, G., et al.: Phys. Rev. B 72, 045219 (2005)

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