Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator-Reference-Cited by-同舟云学术

Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator

Published:2010 Issue:1 Volume:157 Page:H104
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Ma Xiaobo,Liu Weili,Liu Xuyan,Du Xiaofeng,Song Zhitang,Lin Chenglu,Chu Paul K.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

2. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

3. Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation

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1. Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3;Journal of the Korean Physical Society;2021-11-30

2. Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET;Journal of Physics: Conference Series;2020-03-01

3. New strategies for producing defect free SiGe strained nanolayers;Scientific Reports;2018-02-13

4. Direct band gap optical emission from Ge islands grown on relaxed Si0.5Ge0.5/Si (100) substrate;Journal of Applied Physics;2014-01-07

5. Modified postannealing of the Ge condensation process for better-strained Si material and devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-09