Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation-Reference-Cited by-同舟云学术

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Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation

Published:2005 Issue:4 Volume:23 Page:1637
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Di Zengfeng,Zhang Miao,Liu Weili,Luo Suhua,Song Zhitang,Lin Chenglu,Huang Anping,Chu Paul K.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films;Vacuum;2023-07

2. Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure;Applied Surface Science;2015-11

3. Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes;Acta Physica Sinica;2011

4. The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding;ECS Transactions;2010-10-01

5. Modified postannealing of the Ge condensation process for better-strained Si material and devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-09

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