The Effect of Interfacial Layers on High-Performance Gate Dielectrics Processed by RTP-ALD-Reference-Cited by-同舟云学术

The Effect of Interfacial Layers on High-Performance Gate Dielectrics Processed by RTP-ALD

Published:2004 Issue:8 Volume:151 Page:G507
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Fakhruddin Mohammed,Singh Rajendra,Poole Kelvin F.,Kondapi Sriram V.,Narayan Jagdish

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

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3. Rapid isothermal processing

4. M. Fakhruddin, R. Singh, K. F. Poole, S. V. Kondapi, and S. Kar, inPhysics and Technology of High-k Gate Dielectrics I, S. Kar, D. Misra, R. Singh, and F. Gonzalez, Editors, PV 2002-28, p. 41, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).

5. P. J. Chen, E. Cartier, R. J. Carter, T. Kauerauf, C. Zhao, J. Petry, V. Cosnier, Z. Xu, A. Kerber, W. Tsai, E. Young, S. Kubicek, M. Caymax, W. Vandervost, S. D. Gendt, M. Heyns, M. Copel, W. F. A. Besling, P. Bajolet, and J. Maes, inVLSI Technical Digest, IEEE, p. 192 (2002).

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