In situ fabrication of metal gate/high-κ dielectric gate stacks using a potential lower cost front-end process for the sub-90 nm CMOS technology node
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Published:2005
Issue:2
Volume:23
Page:437
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Damjanovic Daniel,Singh Rajendra,Poole Kelvin F.
Publisher
American Vacuum Society
Subject
General Engineering