Abstract
AbstractCurrent trends are in the direction of submicron MOSFETs employing gate dielectrics in the thickness range of about 30 - 100A°. The performance and reliability of submicron MOSFETs can be improved by using high dielectric constant gate dielectric material. A new concept involving 2 or more dielectric material is proposed in this paper. In- situ rapid isothermal processing is proposed for the fabrication of thin gate dielectrics.
Publisher
Springer Science and Business Media LLC
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