Effect of Alkaline Agent on Polishing Rate of Nitrogen-Doped Ge[sub 2]Sb[sub 2]Te[sub 5] Film in Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

Effect of Alkaline Agent on Polishing Rate of Nitrogen-Doped Ge[sub 2]Sb[sub 2]Te[sub 5] Film in Chemical Mechanical Polishing

Published:2008 Issue:10 Volume:11 Page:H288
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Park Jin-Hyung,Cho Jong-Young,Hwang Hee-Sub,Paik Ungyu,Park Jea-Gun

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference19 articles.

1. SiO[sub 2] Incorporation Effects in Ge[sub 2]Sb[sub 2]Te[sub 5] Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices

2. Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, H. S. Hong, H. C. Koo, F. Yeung, J. H. Oh, H. J. Kim, et al. , in IEDM Technical Digest , p. 37.1.1 (2003).

3. Compound materials for reversible, phase‐change optical data storage

4. Laser induced crystallization of amorphous Ge2Sb2Te5 films

5. S. Lai , in IEDM Technical Digest , p. 10.1.1 (2003).

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New High Selectivity Acidic Slurry for Chemical Mechanical Planarization of Carbon-Doped Ge2Sb2Te5 Film;ECS Journal of Solid State Science and Technology;2020-09-01

2. Chemical Mechanical Planarization of Carbon-Doped Amorphous Ge2Sb2Te5 Film with Hydrogen Peroxide as Oxidizer in Alkaline Slurry;ECS Journal of Solid State Science and Technology;2020-01-21

3. Evaluation of Hydrogen Peroxide on Chemical Mechanical Polishing of Amorphous GST;ECS Transactions;2019-12-15

4. Chemical mechanical polishing of Ge2Sb2Te5 in alkaline slurry;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-07

5. Chemical mechanical planarization of germanium using oxone ® based silica slurries;Wear;2017-04