Chemical Mechanical Planarization of Carbon-Doped Amorphous Ge2Sb2Te5 Film with Hydrogen Peroxide as Oxidizer in Alkaline Slurry-Reference-Cited by-同舟云学术

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Chemical Mechanical Planarization of Carbon-Doped Amorphous Ge2Sb2Te5 Film with Hydrogen Peroxide as Oxidizer in Alkaline Slurry

Published:2020-01-21 Issue:2 Volume:9 Page:024007
ISSN:2162-8777
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Feng Daohuan,Liu Weili,Liu Yuxiang,Song Zhitang,Wang Weilei,Wei Zhen,Zhao Gaoyang

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ab682d/pdf

Reference25 articles.

1. Role of the Lysine as a Complexing Agent in Ge2Sb2Te5 Chemical Mechanical PolishingSlurries

2. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

3. Application of Bond Constraint Theory to the Switchable Optical Memory MaterialGe2Sb2Te5

4. Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5Thin Film

5. Nanoscale Phase Separation and Building Blocks of Ge2Sb2Te5N and Ge2Sb2Te5N2 Thin Films

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of slurry pH on the chemical mechanical planarization of a carbon-doped Ge₂Sb₂Te₅ phase change material;Journal of Materials Chemistry C;2022

2. Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization;Applied Sciences;2021-11-17

3. Mechanism of titanium–nitride chemical mechanical polishing*;Chinese Physics B;2021-02-01

4. Research progress of green chemical mechanical polishing slurry;Acta Physica Sinica;2021

5. A New High Selectivity Acidic Slurry for Chemical Mechanical Planarization of Carbon-Doped Ge2Sb2Te5 Film;ECS Journal of Solid State Science and Technology;2020-09-01

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