Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication-Reference-Cited by-同舟云学术

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Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication

Published:2017 Issue:11 Volume:6 Page:S3106-S3109
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wang Huan-Chung,Su Huan-Fu,Luc Quang-Ho,Lee Ching-Ting,Hsu Heng-Tung,Chang Edward Yi

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference19 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. 30-W/mm GaN HEMTs by Field Plate Optimization

3. GaN HEMT Potential for Low-Noise Highly Linear RF Applications

4. AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

5. A $\delta$-Doped InGaP/InGaAs pHEMT With Different Doping Profiles for Device-Linearity Improvement

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration;Results in Physics;2024-04

2. Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNAs;Springer Proceedings in Physics;2024

3. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01

4. Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity;Applied Physics Letters;2023-11-13

5. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications;Micromachines;2023-04-25

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