Process Variability for Devices at and beyond the 7 nm Node
Author:
Funder
European Union's Horizon 2020 programme
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
2. Takeuchi K. Nishida A. Hiramoto T. , in Proc. SISPAD 2009, p. 79, IEEE, Piscataway, NJ (2009).
3. Horizon EC , 2020 project SUPERAID7, see www.superaid7.eu.
4. Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology
5. Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. OPO Reduction by Imaging Signal Optimization in an Advanced Memory Device Process;2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2023-05-01
2. Nanowire Diameter Dependency of the Variability in n/p Silicon Nanowire FETs With Ultrashort Gate Length of 15 nm;IEEE Transactions on Electron Devices;2022-12
3. Process Simulation;Springer Handbook of Semiconductor Devices;2022-11-11
4. Observation Point Insertion Using Deep Learning;Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided Design;2022-10-30
5. Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?;Advanced Materials;2022-04-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3