A Quantum Trap MONOS Memory Device Using AlN-Reference-Cited by-同舟云学术

A Quantum Trap MONOS Memory Device Using AlN

Published:2006 Issue:8 Volume:153 Page:G738
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lai C. H.,Wu C. H.,Chin Albert,Wang S. J.,McAlister S. P.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference10 articles.

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3. Y. K. Lee, S. K. Sung, J. S. Sim, C. J. Lee, T. H. Kim, S. H. Lee, J. D. Lee, B. G. Park, D. H. Lee, and Y. W. Kim ,Symposium on VLSI Technology, p. 208 (2002).

4. T. Sugizaki, M. Kobayashi, M. Ishidao, H. Minakata, M. Yamaguchi, Y. Tamura, Y. Sugiyama, T. Nakanishi, and H. Tanaka ,Symposium on VLSI Technology, p. 27 (2003).

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