Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737158
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4. A high-k Y2O3 charge trapping layer for nonvolatile memory application
5. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
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