Electrochemical Metallization and Trapping/Detrapping Resistive Switching Mechanism in Al/VOx/Cu RRAM-Reference-Cited by-同舟云学术

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Electrochemical Metallization and Trapping/Detrapping Resistive Switching Mechanism in Al/VOx/Cu RRAM

Published:2014-08-12 Issue:10 Volume:3 Page:Q63-Q66
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Zhang K.,Sun K.,Wang F.,Han Y.,Jiang Z.,Wang B.,Liu K.,Wong H. S. P.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO_x)/Pt Device through Two-Step Resistance Change by Ag Filament Formation;ACS Applied Materials & Interfaces;2024-05-13

2. Study of electrical transport and high voltage resistive switching on Ag/PVDF-fibres/Ag and Ag/PVDF-pellet/Ag for memory applications;Inorganic Chemistry Communications;2023-12

3. Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory;Surface and Coatings Technology;2021-09

4. Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material;ACS Applied Materials & Interfaces;2021-02-16

5. Bipolar resistive switching device based on N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/poly(vinyl alcohol) bilayer stacked structure;Applied Physics A;2018-10

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