Bipolar resistive switching device based on N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/poly(vinyl alcohol) bilayer stacked structure-Reference-Cited by-同舟云学术

Bipolar resistive switching device based on N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/poly(vinyl alcohol) bilayer stacked structure

Published:2018-10 Issue:10 Volume:124 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Khan Muhammad Umair,Hassan Gul,Raza Muhammad Asim,Bae Jinho^ORCID

Funder

Ministry of Education

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/article/10.1007/s00339-018-2142-z/fulltext.html

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3. S. Shin, K. Kim, S.-M. Kang, Compact models for memristors based on charge-flux constitutive relationships. Trans. Comp.-Aided Des. Integ. Cir. Syst. 29, 590–598 (2010)

4. G.U. Siddiqui, M.M. Rehman, K.H. Choi, Enhanced resistive switching in all-printed, hybrid and flexible memory device based on perovskite ZnSnO3 via PVOH polymer. Polymer 100, 102–110 (2016)

5. S. Ali, J. Bae, C.H. Lee, K.H. Choi, Y.H. Doh, All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite. Org. Electron. 25, 225–231 (2015)

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