Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material-Reference-Cited by-同舟云学术

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Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material

Published:2021-02-16 Issue:8 Volume:13 Page:10161-10170
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jeon Yu-Rim¹,Choi Jungmin²,Kwon Jung-Dae²,Park Min Hyuk³,Kim Yonghun²^ORCID,Choi Changhwan¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea

2. Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea

3. School of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of Korea

Funder

Korea Research Council for Industrial Science and Technology

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c18784

Reference42 articles.

1. Lee, H. Y.; Chen, Y. S.; Chen, P. S.; Gu, P. Y.; Hsu, Y. Y.; Wang, S. M.; Liu, W. H.; Tsai, C. H.; Sheu, S. S.; Chiang, P. C.; Lin, W. P.; Lin, C. H.; Chen, W. S.; Chen, F. T.; Lien, C. H.; Tsai, M.J. In Evidence and Solution of Over-RESET Problem for HfOX Based Resistive Memory with Sub-Ns Switching Speed and High Endurance, 2010 IEEE International Electron Devices Meeting, 2010; pp 19.7.1–19.7.4.

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Record Low-Power Organic RRAM With Sub-20-nA Reset Current

4. Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

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