High‐Selectivity and High‐Deposition Rate Tungsten CVD Freed from Chamber Cleaning-Reference-Cited by-同舟云学术

High‐Selectivity and High‐Deposition Rate Tungsten CVD Freed from Chamber Cleaning

Published:1994-02-01 Issue:2 Volume:141 Page:566-571
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Maeda Y.¹²,Suzuki H.¹²,Sakoh T.¹,Morita K.¹,Morita M.¹²,Ohmi T.¹

Affiliation:

1. Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza‐Aoba, Aramaki, Aoba‐ku, Sendai 980, Japan

2. Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2‐1‐1 Katahira, Aoba‐ku, Sendai 980, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054768/pdf

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