Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction-Reference-Cited by-同舟云学术

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Published:1996-09 Issue:9 Volume:25 Page:1531-1538
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Gokce O. H.,Sears J. T.,Sahin T.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02655395.pdf

Reference58 articles.

1. J.S. Lo, R.W. Haskell, J.G.Byrne and A. Sosin,4th Intl. Conf. on CVD, (Princeton, NJ: The Electrochem. Soc., 1973), p. 74.

2. R. Foster, S. Tseng, L. Lane and K. Ahn,Tungsten and Other- Refractory Metals for VLSI Applications III, ed. V.A. Wells (Pittsburgh, PA: MRS Publishers, 1988), p. 69.

3. T. Ohba, S. Inoue and M. Maeda,Proc. IEEE IEDM Tech Digest, (1987), p. 213.

4. H. Kotani, T. Tsutsumi, J. Komori and S. Nagao, ibid., p. 217.

5. N. Kobayashi, N. Hara, S. Iwata and Y. Yamamota,Proc. V-Mic. Conf., (1986), p. 436.

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