Electrostatically Driven Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Electrostatically Driven Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition

Published:2019-05-06 Issue:14 Volume:216 Page:1800797
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Van Toan Nguyen¹,Zhao Dong¹,Inomata Naoki¹,Toda Masaya¹,Song Yunheub²,Ono Takahito¹³

Affiliation:

1. Graduate School of EngineeringTohoku UniversitySendai980‐8579Japan

2. Department of Electronic EngineeringHanyang UniversitySeoul980‐8579Korea

3. Micro System Integration CenterTohoku UniversitySendai519‐1176Japan

Funder

Council for Science, Technology and Innovation

Cross-ministerial Strategic Innovation Promotion Program

JSPS KAKENHI for Young Scientists B

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800797

Reference32 articles.

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2. U.Zaghloul G.Piazza Piezoelectric buckling‐based NEMS relays for millivolt mechanical logic’ Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) 2014 1099.

3. Nanoelectromechanical contact switches

4. Nanoelectromechanical Switches for Low-Power Digital Computing

5. F. K.Chowdhury K. N.Chappanda D.Saab M.Tabib‐Azar “No vel single‐device XOR and AND gates for high speed very low power LSI mechanical processors ” Proceedings of the 16th International Solid‐State Sensors Actuators and Microsystems Conference 2011 1100.

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2. Multiscale Modeling in Chemical Vapor Deposition Processes: Models and Methodologies;Archives of Computational Methods in Engineering;2020-01-21