Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth-Reference-Cited by-同舟云学术

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Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

Published:2009 Issue:4 Volume:12 Page:H142
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Park J.-S.,Curtin M.,Hydrick J. M.,Bai J.,Li J.-T.,Cheng Z.,Carroll M.,Fiorenza J. G.,Lochtefeld A.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference20 articles.

1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

2. New infrared detector on a silicon chip

3. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

4. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

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1. Controlled formation of three-dimensional cavities during lateral epitaxial growth;Nature Communications;2024-03-13

2. High-quality Ge epitaxial film based on dislocation trapping mechanism in patterned Si substrate;Japanese Journal of Applied Physics;2024-02-01

3. Reduced Threading Dislocation Density in a Ge Epitaxial Film on a Submicron-Patterned Si Substrate Grown by Chemical Vapor Deposition;Journal of Electronic Materials;2023-03-07

4. Reduced threading dislocation density in a germanium epitaxial film coalesced on an arrayed silicon-on-insulator strip;Japanese Journal of Applied Physics;2022-08-19

5. Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration;Progress in Quantum Electronics;2021-01

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