Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation-Reference-Cited by-同舟云学术

Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation

Published:2006 Issue:9 Volume:153 Page:G815
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Tu Chun-Hao,Chang Ting-Chang,Liu Po-Tsun,Chen Chih-Hung,Yang Che-Yu,Wu Yung-Chun,Liu Hsin-Chou,Chang Li-Ting,Tsai Chia-Chou,Sze Simon M.,Chang Chun-Yen

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Development of a 10.4-in. UXGA display using low-temperature poly-Si technology

2. Current and future technology of low-temperature poly-Si TFT-LCDs

3. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas

4. Low-temperature (

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