High-Performance Poly-Si TFTs of Top-Gate with High-κ Metal-Gate Combine the Laser Annealed Channel and Glass Substrate-Reference-Cited by-同舟云学术

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High-Performance Poly-Si TFTs of Top-Gate with High-κ Metal-Gate Combine the Laser Annealed Channel and Glass Substrate

Published:2011 Issue:1 Volume:14 Page:H17
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lu Yi-Hsien,Chien Chao-Hsin,Kuo Po-Yi,Yang Ming-Jui,Lin Hsiao-Yi,Chao Tien-Sheng

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference19 articles.

1. Current and future technology of low-temperature poly-Si TFT-LCDs

2. CF[sub 4] Plasma Treatment for Fabricating High-Performance and Reliable Solid-Phase-Crystallized Poly-Si TFTs

3. Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extraction Method for Equivalent Oxide Thickness of a Thin High-κ Gate Insulator and Estimation of Field-Effect Mobility in Amorphous Oxide Semiconductor Nano-Sheet Junctionless Transistors;IEEE Transactions on Electron Devices;2022-09

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