(Invited) Investigation of High-κ/InxGa1-xAs Interfaces

Abstract

The quality of the high-k/InxGa1-xAs interface is a crucial factor in achieving high electron mobility compound semiconductor field effect transistors. Capacitance and conductance characterisation methods were employed to evaluate different high-k/InGaAs interfaces. This paper will first discuss the specificity of capacitance voltage characteristics of compound semiconductor MOS structures, and then the recent progress in the study of high k/InxGa1 xAs interfaces will be presented. The capacitance and conductance measurements are combined to provide a picture of the interface state density. We have also investigated the merit of using intermediate k value dielectrics such as Al2O3 and MgO as interface control layers between the semiconductor and the main high k layer.