Control of Plasma Damage to Gate Oxide during High Density Plasma Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Control of Plasma Damage to Gate Oxide during High Density Plasma Chemical Vapor Deposition

Published:1995-11-01 Issue:11 Volume:142 Page:L208-L211
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Bothra Subhas¹,Gabriel Calvin T.¹,Lassig Stephan²,Pirkle David²

Affiliation:

1. VLSI Technology, Incorporated, San Jose, California 95131, USA

2. Lam Research Corporation, CVD Division, Fremont, California 94538, USA

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2048449/pdf

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