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Very high frequency plasma reactant for atomic layer deposition

Published:2016-11 Issue: Volume:387 Page:109-117
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Oh Il-Kwon,Yoo Gilsang,Yoon Chang Mo,Kim Tae Hyung,Yeom Geun Young,Kim Kangsik,Lee Zonghoon,Jung Hanearl,Lee Chang Wan,Kim Hyungjun,Lee Han-Bo-Ram

Funder

Industrial Strategic Technology Development Program

Ministry of Knowledge Economy

MOTIE (Ministry of Trade, Industry & Energy

KSRC

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference61 articles.

1. Scaling the gate dielectric: materials, integration, and reliability;Buchanan;IBM J. Res. Develop.,1999

2. Defects in SiO2 and Related Dielectrics: Science and Technology;Gusev,2000

3. Ultrathin (<4nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits;Green;J. Appl. Phys.,2001

4. Atomic layer deposition of metal and nitride thin films: current research efforts and applications for semiconductor device processing;Kim;J. Vac. Sci. Technol. B,2003

5. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition;Kim;J. Vac. Sci. Technol. B,2002

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