Inhibition of the Electrostatic Force-Induced Atomic Migration in Ge[sub 2]Sb[sub 2]Te[sub 5] by Nitrogen Doping-Reference-Cited by-同舟云学术

Inhibition of the Electrostatic Force-Induced Atomic Migration in Ge[sub 2]Sb[sub 2]Te[sub 5] by Nitrogen Doping

Published:2010 Issue:9 Volume:13 Page:H321
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Yang Tae-Youl,Cho Ju-Young,Joo Young-Chang

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference10 articles.

1. K. Kim and S. J. Ahn , in IEEE Reliability Physics Symposium Proceedings , IEEE, pp. 157–162 (2005).

2. Crystallization Behavior and Physical Properties of Sb-Excess Ge[sub 2]Sb[sub 2+x]Te[sub 5] Thin Films for Phase Change Memory (PCM) Devices

3. C. F. Chen, A. Schrott, M. H. Lee, S. Raoux, Y. H. Shih, M. Breitwisch, F. H. Baumann, E. K. Lai, T. M. Shaw, P. Flaitz, et al. , in The 2009 IEEE International Memory Workshop , IEEE, p. 5090589 (2009).

4. Investigation of crystallization behaviors of nitrogen-doped Ge2Sb2Te5 films by thermomechanical characteristics

5. Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

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