A study of electromigration behaviors of Ge2Sb2Te5chalcogenide nano-strips subjected to pulse bias-Reference-Cited by-同舟云学术

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A study of electromigration behaviors of Ge2Sb2Te5chalcogenide nano-strips subjected to pulse bias

Published:2017-06-20 Issue:27 Volume:50 Page:275301
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Huang Yin-Hsien,Hsieh Tsung-Eong

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa749b/pdf

Reference36 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Change of Damage Mechanism by the Frequency of Applied Pulsed DC in the Ge[sub 2]Sb[sub 2]Te[sub 5] Line

3. Inhibition of the Electrostatic Force-Induced Atomic Migration in Ge[sub 2]Sb[sub 2]Te[sub 5] by Nitrogen Doping

4. Electric-Field-Induced Mass Movement of Ge[sub 2]Sb[sub 2]Te[sub 5] in Bottleneck Geometry Line Structures

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1. 基于硫基相变材料的存内计算器件与集成芯片（特邀）;Acta Optica Sinica;2024

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