Investigation of crystallization behaviors of nitrogen-doped Ge2Sb2Te5 films by thermomechanical characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3078820
Reference10 articles.
1. Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5Thin Films
2. Crystallization Behavior and Physical Properties of Sb-Excess Ge[sub 2]Sb[sub 2+x]Te[sub 5] Thin Films for Phase Change Memory (PCM) Devices
3. The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
4. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
5. Mechanical stresses upon crystallization in phase change materials
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