The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Materials aspects in phase change optical recording
2. Simulations of Switching Behavior in a Ferroelectric Liquid Crystal
3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
4. Potential of Ge-Sb-Te phase-change optical disks for high-data-rate recording in the near future
5. Quantitative study of nitrogen doping effect on cyclability of Ge-Sb-Te phase-change optical disks
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1. Spectroscopic study of nitrogen incorporation in Ge, Sb, and Te elemental systems: A step toward the understanding of nitrogen effect in phase-change materials;Journal of Applied Physics;2022-11-28
2. Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties;Materials & Design;2021-02
3. Overview of the Role of Alloying Modifiers on the Performance of Phase Change Memory Materials;Journal of Electronic Materials;2020-11-09
4. Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application;Journal of Electronic Materials;2019-11-12
5. Ultra-Long Retention and Low Power Consumption of Superlattice-Like Ge50Te50/Ge Thin Films for Phase Change Memory Application;ECS Journal of Solid State Science and Technology;2019
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