Neutron Activation Study of a Gettering Treatment for Czochralski Silicon Substrates-Reference-Cited by-同舟云学术

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Neutron Activation Study of a Gettering Treatment for Czochralski Silicon Substrates

Published:1981-03-01 Issue:3 Volume:128 Page:620-624
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Katz L. E.¹²,Schmidt P. F.¹²,Pearce C. W.¹²

Affiliation:

1. Bell Laboratories, Incorporated, Allentown, Pennsylvania 18103

2. Western Electric Company, Allentown, Pennsylvania 18103

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2127470/pdf

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Iron contamination in silicon technology;Applied Physics A: Materials Science & Processing;2000-05-01

2. Determination of Particle-Bound Metallic Impurities in Semiconductor Grade Gases. 1. Silane;Analytical Chemistry;1996-01-01

3. Diffusion;Fundamentals of Semiconductor Processing Technology;1995

4. Gettering of Impurities;Metal Impurities in Silicon-Device Fabrication;1995

5. Low‐temperature gettering of trace iron and copper by misfit dislocations in Si/Si(Ge) epitaxy;Applied Physics Letters;1994-07-18

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